PART |
Description |
Maker |
K7S3236T4C08 K7S3218T4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7S3218U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7B321825M K7B323625M K7B323625M-QC6575 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7A321800M-QC25 K7A323600M-QC20 K7A321800M-QC20 K7 |
1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7D323674C-HC33 K7D323674C-GC33 K7D323674C-GC40 K7 |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
K7B321835C |
1Mx36 & 2Mx18 Synchronous SRAM
|
Samsung semiconductor
|
K7P321874C K7P323674C K7P323674C-HC300 |
1Mx36 & 2Mx18 SRAM 1M X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
|
Samsung semiconductor
|
K7I323682C K7I321882C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
CY7C1543KV18-400BZC CY7C1545KV18-450BZXI |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
K7N321801M-FC16 K7N321801M-FC20 K7N321801M-QC13 K7 |
1MX36 & 2MX18 PIPELINED NTRAM
|
SAMSUNG[Samsung semiconductor]
|
K7M321835C-PC65 K7M321835C-PI65 K7M321835C-QC65 K7 |
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|